Infineon Technologies will supply silicon carbide power devices for integration into Eaton's medium-voltage solid-state transformer 2.0 platform, targeting 800VDC data center power distribution architectures. Eaton says its MVSST 2.0 reduces conversion stages compared with conventional AC-to-DC architectures, improving efficiency, power density, and deployment flexibility, with SiC's superior thermal conductivity and higher switching speeds further improving performance. David Zheng, VP of R&D for power quality in APAC at Eaton, and Andreas Weisl, EVP and chief sales officer of industrial and infrastructure at Infineon, both cited rapidly growing AI data center power demands as the driver for the collaboration. The two companies said they plan to explore next-generation platforms based on 2.3kV and 3.3kV SiC power modules to support higher system voltages in future facilities.
As rack densities approach 1 megawatt, conventional AC power distribution architectures face efficiency and scalability limits, and 800VDC has emerged as a leading distribution class for high-density AI racks. The Infineon-Eaton collaboration on solid-state transformer technology using silicon carbide directly addresses the power conversion challenge at the infrastructure layer, with a roadmap extending to higher voltage modules that could shape how next-generation data centers connect to the grid.
Two named companies partnering on a specific next-generation power architecture technology (SiC solid-state transformers for 800VDC) signals a meaningful advancement in data center power infrastructure. This is distinct from the DG Matrix/TerraFlow solid-state transformer pilot already published.